| 摘要 |
<p>A high-voltage semiconductor device and a manufacturing method thereof are provided to improve a punch through breakdown voltage in a P type well formed in an inside of a low-density deep N type well. A first high-voltage N type well(112) is formed on a semiconductor substrate(110). A first high-voltage P type well(118) is formed on the first high-voltage N type well. A second first high-voltage N type well(114) is formed in the inside of the first high-voltage N type well in order to surround the first high-voltage P type well. A gate insulating layer(122) and a gate electrode(124) are stacked on an upper part of the first high-voltage P type well. A first N type high-density impurity region(130) is formed on both sides of the gate electrode within the first high-voltage P type well. A second N type high-density impurity region(132) is formed in the inside of the second high-voltage N type well.</p> |
