发明名称 |
Polishing slurries for copper and associated materials |
摘要 |
A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
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申请公布号 |
US7427567(B2) |
申请公布日期 |
2008.09.23 |
申请号 |
US20050145807 |
申请日期 |
2005.06.06 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
WOJTCZAK WILLAIM A.;BAUM THOMAS H.;NGUYEN LONG;REGULSKI CARY |
分类号 |
H01L21/302;C09C1/68;C09G1/02;H01L21/321 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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