发明名称 Polishing slurries for copper and associated materials
摘要 A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
申请公布号 US7427567(B2) 申请公布日期 2008.09.23
申请号 US20050145807 申请日期 2005.06.06
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 WOJTCZAK WILLAIM A.;BAUM THOMAS H.;NGUYEN LONG;REGULSKI CARY
分类号 H01L21/302;C09C1/68;C09G1/02;H01L21/321 主分类号 H01L21/302
代理机构 代理人
主权项
地址