发明名称 CVD method for forming metal film by using metal carbonyl gas
摘要 A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.
申请公布号 US7427426(B2) 申请公布日期 2008.09.23
申请号 US20050119906 申请日期 2005.05.03
申请人 TOKYO ELECTRON LIMITED 发明人 HATANO TATSUO;YAMASAKI HIDEAKI
分类号 C23C16/16;C23C16/00;C23C16/44 主分类号 C23C16/16
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