发明名称 |
CVD method for forming metal film by using metal carbonyl gas |
摘要 |
A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.
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申请公布号 |
US7427426(B2) |
申请公布日期 |
2008.09.23 |
申请号 |
US20050119906 |
申请日期 |
2005.05.03 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HATANO TATSUO;YAMASAKI HIDEAKI |
分类号 |
C23C16/16;C23C16/00;C23C16/44 |
主分类号 |
C23C16/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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