| 摘要 |
FIELD: electricity. ^ SUBSTANCE: in the piezoelectric resonator, which contains a piezoelectric cell with shifting vibrations through it thickness when it is connected to adjustable voltage with metal electrodes put on its lateral sides and a tuning layer with high electrical resistance. The mentioned tuning layer is executed twice in the form of a film of inter-metallic compounds of type AII BIV with weakly expressed metal bond, moreover the first protective layer is put of thickness of not less than 10 angstroms to all the planes of the piezoelectric cell. The tuning layer can be executed in the form of a film from zinc selenide, with the width of the forbidden zone 2.58 eV, or selenide cadmium, with the width of the forbidden zone 1.68 eV, or - in the form of a film from a mixture of the selenides of zinc and cadmium of arbitrary composition. ^ EFFECT: increase stability; increase of reliability of piezoelectric resonators and decrease in the cost price of their manufacturing. ^ 4 cl, 1 tbl |
