| 摘要 |
FIELD: technological processes. ^ SUBSTANCE: on crystal that has etched deepenings on its surface, first sheet of negative photoresist is applied, which by means of exposure and further development stays only above etched deepenings, then positive photoresist is applied onto negative photoresist, which is exposed and developed for creation of functional topologies that are deposited in the form of thin films, then positive photoresist is removed by means of operation of "liftoff lithography", and negative photoresist is removed with the help of plasma operation, thus concealing all etched deepenings. ^ EFFECT: selective coating of layer on crystal with uneven surface. ^ 20 cl, 23 dwg |
