| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of achieving ideal device characteristics by reducing plasma damage, especially plasma damage in a process after metal film formation, with simple configurations and processes. SOLUTION: Short-circuiting wiring 125 is formed in a region on a wafer 120 including a dicing region 122, and respective electrode pads 103 for I/O signals of a plurality of devices arranged in a semiconductor device formation region 121 are short-circuited mutually and electrically via the short-circuiting wiring 125, thus suppressing the generation of plasma damage even if performing various kinds of plasma treatment to the wafer 120. When the wafer 120 after the plasma treatment is cut in the dicing region 122 for dividing into individual semiconductor devices 100, respective electrode pads 103 by the short-circuiting wiring 125 are released electrically, thus precisely releasing unneeded short-circuiting in terms of the function of each device, or the like. COPYRIGHT: (C)2008,JPO&INPIT |
