发明名称 |
Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device |
摘要 |
To achieve high performance of a semiconductor integrated circuit depending on not only a microfabrication technique but also another way. In addition, to achieve low power consumption of a semiconductor integrated circuit. A semiconductor device is provided in which crystal faces and/or crystal axes of single-crystalline semiconductor layers of a first conductive MISFET and a second conductive MISFET are different. The crystal faces and/or crystal axes are arranged so that mobility of carriers flowing in channel length directions in the respective MISFETs is increased. Such a structure can increase mobility of carriers flowing through channels of the MISFETs and high speed operation of a semiconductor integrated circuit can be achieved. Further, low voltage driving becomes possible, and low power consumption can be realized.
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申请公布号 |
US2008224274(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080073927 |
申请日期 |
2008.03.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MIYAIRI HIDEKAZU |
分类号 |
H01L21/30;H01L29/04 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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