发明名称 |
METHOD OF MANUFACTURING NON-VOLATILE MEMORY |
摘要 |
A non-volatile memory is provided. A substrate having a number of trenches and a number of select gates is provided. The trenches are arranged in parallel and extend in a first direction. Each of the select gates is disposed on the substrate between two adjacent trenches respectively. A number of select gate dielectric layers are disposed between the select gates and the substrate. A number of composite layers are disposed over the surface of the trenches and each composite layer has a charge trapping layer. A number of word lines are arranged in parallel in a second direction, wherein each of the word lines fills the trenches between adjacent select gates and is disposed over the composite layers.
|
申请公布号 |
US2008227282(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080107775 |
申请日期 |
2008.04.23 |
申请人 |
POWERCHIP SEMICONDUCTOR CORP. |
发明人 |
WONG WEI-ZHE;YANG CHING-SUNG |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|