发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY |
摘要 |
A nonvolatile semiconductor memory according to an aspect of the invention includes memory cell arrays including plural cell units, a power supply pad disposed on one end in a first direction of the memory cell arrays, and page buffers disposed in the first direction of the memory cell arrays. The nonvolatile semiconductor memory also includes plural bit lines which are disposed on the memory cell arrays while extending in the first direction and a first power supply line which is disposed on the plural bit lines on the memory cell arrays to connect the power supply pad and the page buffers.
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申请公布号 |
US2008225591(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080043510 |
申请日期 |
2008.03.06 |
申请人 |
HOSONO KOJI;YOSHIHARA MASAHIRO;NAKAMURA DAI;KAI YOUICHI |
发明人 |
HOSONO KOJI;YOSHIHARA MASAHIRO;NAKAMURA DAI;KAI YOUICHI |
分类号 |
G11C16/06;G11C5/14 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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