| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that generates a duty-corrected delay locked clock and corrects duty only by one DLL and efficiently corrects the duty ratio of an inputted clock signal to be outputted. <P>SOLUTION: The semiconductor memory device includes a DLL circuit to generate the delay locked clock by locking the delay, and a duty correction circuit to correct a duty ratio of the delay locked clock by using the delay locked clock and a clock formed by dividing the delay locked clock by an even value. <P>COPYRIGHT: (C)2008,JPO&INPIT |
