| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dry etching method of gallium nitride based compound semiconductor such that a smooth etched-surface still can be obtained in a lower degree of vacuum (high pressure) of 10<SP>-3</SP>Pa order, and which can further make aluminum oxide etch, such as a sapphire substrate or an alumina substrate. <P>SOLUTION: Using plasma 26 generated from reaction gas including chlorine gas and gas of compounds (chloroform, dichloromethane, etc.) expressed with the chemical formula C<SB>x</SB>H<SB>y</SB>Cl<SB>z</SB>, where x, y and z are positive integers, gallium nitride based compound layers 22-24, the sapphire substrate 21 or the alumina substrate are etched. <P>COPYRIGHT: (C)2008,JPO&INPIT |
