发明名称 |
GATE VOLTAGE CONTROL SYSTEM AND METHOD FOR ELECTROSTATICALLY ACTUATING MICRO-ELECTROMECHANICAL DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a gate voltage control system for electrostatically actuating a MEMS switch 14. <P>SOLUTION: The gate voltage control system includes an electrostatically responsive actuator movable through a gap for changing over a close state/open state. A drive circuit 10 applies a gate voltage to a gate terminal 16 of a device in accordance with a gate voltage control sequence. The gate voltage control sequence includes: a first interval T1 for ramping up the gate voltage at a certain rate to a voltage level for producing an electrostatic force sufficient to accelerate the actuator through a portion of the gap to be traversed by the actuator to reach each actuating condition; a second interval T2 for ramping down the gating voltage at a certain rate to a level sufficient to reduce the electrostatic force acting on the movable actuator. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008218400(A) |
申请公布日期 |
2008.09.18 |
申请号 |
JP20080002778 |
申请日期 |
2008.01.10 |
申请人 |
GENERAL ELECTRIC CO <GE> |
发明人 |
WRIGHT JOSHUA ISAAC;SUBRAMANIAN KANAKASABAPATHI;PREMERLANI WILLIAM JAMES;PARK JOHN N;KEIMEL CHRISTOPHER;QUE LONG;KISHORE KUNA VENKAT SATYA RAMA;SATHE ABHIJEET DINKAR;WANG XUEFENG;HOWELL EDWARD KEITH |
分类号 |
H01H59/00;B81B3/00;B81B7/02;H01H47/00 |
主分类号 |
H01H59/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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