| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein interconnections can be formed in high density without increasing the entire size of the device, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device has such a structure that intermediate conductor layers 11 and insulation layers 12 are alternately stacked on the sides of a semiconductor structure 4 and that a conductor layer 13 is formed at least in the same layer as an electrode 5 for external connection of the semiconductor structure 4. The method of manufacturing the semiconductor device includes processes of: mounting the semiconductor structure 4 on a substrate 1 serving as a support body for supporting the semiconductor substrate 4; forming laminate portions consisting of the insulation layers 12 and the intermediate conductor layers 11 on the sides of the semiconductor structure by stacking the insulation layers 12 and metal foils on the substrate 1 and covering the top face and side faces of the semiconductor structure 4 with a resin flown out of the insulation layers 12; and stacking an insulation layer and a metal foil on the intermediate conductor layers 11 to form the conductor layer 13 in the same layer as the electrode 5 for external connection of the semiconductor structure 4. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
