POST CMP PROCESSING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a post CMP processing liquid efficiently removing extraneous matters on the surfaces of an interconnection layer and an insulation film.

SOLUTION: This processing liquid contains water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxyl groups and sulfonyl groups on surfaces and each primary particle size≥10 mm and≤60 mm, and tetramethyl ammonium hydroxide. The pH is≥4 and≤9, and each polishing speed of the insulation film and a conductive film is≤10 nm/min.

COPYRIGHT: (C)2008,JPO&INPIT