发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem of an increase in current consumption in a semiconductor memory device for performing precharge to a ground potential. SOLUTION: The semiconductor memory device for precharging a bit line pair to a ground potential is provided with a first bit line forming one of bit line pair and set to a first or a second voltage based on a logical value held in a memory cell, a second bit line forming the other of the bit line pair, a sense amplifier for deciding a logical value to be held in the memory cell according to a potential difference between a voltage of the first bit line and a reference voltage, a reference voltage generation circuit for outputting a voltage which is a middle point between the first and second voltages as a reference voltage, and a reference voltage supply switch for connecting the output of the reference voltage generation circuit to the entry of the sense amplifier. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008217944(A) 申请公布日期 2008.09.18
申请号 JP20070056922 申请日期 2007.03.07
申请人 NEC ELECTRONICS CORP 发明人 TAKAHASHI HIROYUKI;NAKAGAWA ATSUSHI
分类号 G11C11/4091 主分类号 G11C11/4091
代理机构 代理人
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