| 摘要 |
PROBLEM TO BE SOLVED: To provide a small-sized semiconductor device even when a protective element for an electrostatic breakdown voltage is provided. SOLUTION: In the semiconductor device 1, a substrate 2 composed of single-crystal silicon is provided and an element 3 is formed in an element region A on the surface of the substrate 2. The element 3 is a function element for achieving the original function of the semiconductor device 1. Also, an inter-layer insulating film 4 is formed on the substrate 2, a polysilicon layer 5 is formed in a protective region B on the inter-layer insulation film 4, and an element 6 is formed inside the polysilicon layer 5. The element 6 is the protective element for the electrostatic breakdown voltage for protecting the element 3 from static electricity. Further, an inter-layer insulating film 7 is formed on the inter-layer insulating film 4, and then a pad 8 is provided in a pad region C on the inter-layer insulating film 7. Then, the protective region B is provided near the immediate upper region of the element region A, and the pad region C is provided near the immediate upper region of the element region A and the protective region B. COPYRIGHT: (C)2008,JPO&INPIT |
