| 摘要 |
PROBLEM TO BE SOLVED: To provide an HEMT capable of using InAs, InGaAs or InSb as a channel layer, and capable of using Si as an n-type impurity for an electron supply layer. SOLUTION: This compound semiconductor device comprises a semiconductor substrate, a lamination of III-V compound semiconductors formed on the semiconductor substrate including the channel layer of InAs, InSb, etc. and the electron supply layer. The electron supply layer has a lamination of a barrier layer containing Sb as a V group element of AlSb, InAlSb, etc., and a quantized doped layer of InAs, etc., formed in the barrier layer, having an energy band gap smaller than that of the barrier layer, containing at least one of P and As as a V group element but not containing Sb, and doped with Si but having no carrier electron therein, and source, drain and gate electrodes formed on the lamination. COPYRIGHT: (C)2008,JPO&INPIT
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