发明名称 |
FORMATION OF COMPOSITE TUNGSTEN FILMS |
摘要 |
Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
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申请公布号 |
US2008227291(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080128499 |
申请日期 |
2008.05.28 |
申请人 |
LAI KEN K;BYUN JEONG SOO;WU FREDERICK C;SRINIVAS RAMANUJAPURAN A;GELATOS AVGERINOS;CHANG MEI;KORI MORIS;SINHA ASHOK K;CHUNG HUA;FANG HONGBIN;MAK ALFRED W;YANG MICHAEL X;XI MING |
发明人 |
LAI KEN K.;BYUN JEONG SOO;WU FREDERICK C.;SRINIVAS RAMANUJAPURAN A.;GELATOS AVGERINOS;CHANG MEI;KORI MORIS;SINHA ASHOK K.;CHUNG HUA;FANG HONGBIN;MAK ALFRED W.;YANG MICHAEL X.;XI MING |
分类号 |
C23C16/14;H01L21/44;C23C16/02;C23C16/04;C23C16/08;C23C16/44;C23C16/455;H01L21/28;H01L21/285;H01L21/768 |
主分类号 |
C23C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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