| 摘要 |
The invention relates to an insulating layer system (10) for a sensor (1), in particular for a pressure sensor or a force sensor that are produced according to a thin or thick layer technique, comprising a layer system (10) having a first layer and a second layer. The first layer comprises a first element and the second layer comprises a second element that differs from the first element. Said invention is characterised in that the transition between the first layer and the second layer is formed by a transition area (14, 18, 22, 26), such that the concentration of the first element in the transition area (14, 18, 22, 26) continuously increases or reduces at least in parts, starting from one end of the transition area (14, 18, 22, 26) facing the first layer in the direction of one end of the transition area (14, 18, 22, 26) facing the second layer and/or that the concentration of the second element in the transition area (14, 18, 22, 26) continuously increases or reduces, at least in parts starting from one end of the transition area (14, 18, 22, 26) facing the second layer in the direction of one end of the transition area (14, 18, 22, 26) facing the first layer. Said invention also relates to a sensor (1) comprising said type of insulating layer system (10). |
