发明名称 ETCHING SOLUTION AND ETCHING METHOD
摘要 <p>Disclosed is an etching solution which has excellent wettability on a hydrophobic bare silicon and enables the efficient etching of gold or palladium at a narrow gap. Specifically disclosed is an aqueous etching solution for use in the treatment of gold or palladium, which contains iodine, a salt of an iodide, water and a glycol ether compound. The glycol ether compound is preferably represented by the general formula (1). R&lt;SUP&gt;1&lt;/SUP&gt;-O-(R&lt;SUP&gt;2&lt;/SUP&gt;-O-)&lt;SUB&gt;n&lt;/SUB&gt;-H (1) wherein R&lt;SUP&gt;1&lt;/SUP&gt; represents an alkyl group having 4 to 20 carbon atoms; R&lt;SUP&gt;2&lt;/SUP&gt; represents an alkylene group having 2 to 4 carbon atoms; and n represents an integer of 2 to 40.</p>
申请公布号 WO2008111389(A1) 申请公布日期 2008.09.18
申请号 WO2008JP53267 申请日期 2008.02.26
申请人 MITSUBISHI CHEMICAL CORPORATION;ISHIKAWA, MAKOTO;SAITOU, NORIYUKI;AOKI, MASUMI 发明人 ISHIKAWA, MAKOTO;SAITOU, NORIYUKI;AOKI, MASUMI
分类号 C23F1/30;H01L21/308;H01L21/3213 主分类号 C23F1/30
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