发明名称 |
ETCHING SOLUTION AND ETCHING METHOD |
摘要 |
<p>Disclosed is an etching solution which has excellent wettability on a hydrophobic bare silicon and enables the efficient etching of gold or palladium at a narrow gap. Specifically disclosed is an aqueous etching solution for use in the treatment of gold or palladium, which contains iodine, a salt of an iodide, water and a glycol ether compound. The glycol ether compound is preferably represented by the general formula (1). R<SUP>1</SUP>-O-(R<SUP>2</SUP>-O-)<SUB>n</SUB>-H (1) wherein R<SUP>1</SUP> represents an alkyl group having 4 to 20 carbon atoms; R<SUP>2</SUP> represents an alkylene group having 2 to 4 carbon atoms; and n represents an integer of 2 to 40.</p> |
申请公布号 |
WO2008111389(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
WO2008JP53267 |
申请日期 |
2008.02.26 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION;ISHIKAWA, MAKOTO;SAITOU, NORIYUKI;AOKI, MASUMI |
发明人 |
ISHIKAWA, MAKOTO;SAITOU, NORIYUKI;AOKI, MASUMI |
分类号 |
C23F1/30;H01L21/308;H01L21/3213 |
主分类号 |
C23F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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