METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to enhance reliability by preventing the generation of noise of an image sensor. An interlayer dielectric(120) is formed on a substrate(100) including a gate insulating layer(105), a gate electrode, and a photodiode region(118). A mold insulating layer is formed on the interlayer dielectric in order to expose the interlayer dielectric on the photodiode region. A protective layer(185) including hydrogen atoms are formed along a profile of the mold insulating layer. An annealing process is performed to diffuse the hydrogen atoms from the protective layer to the gate insulating layer and the photodiode region.