| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of easily manufacturing such semiconductor device as comprises a surface channel type minute P channel MIS transistor, with high NBTI reliability as the entire device. <P>SOLUTION: In order to provide a semiconductor device comprising a surface channel type minute P channel MIS transistor 20P, a semiconductor substrate 10 is selectively applied with laser annealing for a first functional region. Relating to the semiconductor substrate, the first functional region MR in which P channel MIS transistor, with a silicon oxynitride film contained in a gate insulating film 11, is integrated at relatively high density and a second functional region LR in which the P channel MIS transistor is integrated at relatively low density are formed on one side, with an electric insulating film 40A for an interlayer insulating film covering each of the P channel MIS transistors being formed. By the selective laser annealing, each of the gate insulating films formed in the first functional region is reformed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
