| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology for enhancing the connection reliability of wiring in a circuit device. <P>SOLUTION: The circuit device 10 comprises a semiconductor substrate 12 on which a circuit element is formed, an electrode 14 formed on the surface S of the semiconductor substrate 12, an insulating layer 16 provided on the electrode 14, a second wiring layer 18 provided on the insulating layer 16, and a conductive bump 20 for connecting the electrode 14 and the second wiring layer 18 by penetrating the insulating layer 16. In the conductive bump 20, the crystal grain size in the direction parallel with the surface S of the semiconductor substrate 12 is larger than the crystal grain size in the conducting direction of the electrode 14 and the second wiring layer 18. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
