| 摘要 |
PROBLEM TO BE SOLVED: To attain a magnetic memory device which can be less influenced by a magnetic field leaked from a fixed layer to reduce variation in magnetization reversal magnetic field, and can be stably operated. SOLUTION: A magnetic memory element MM includes a fixed layer 1 which has a fixed magnetization direction and a recording layer 3 which has at least an easy magnetization axis and which is varied in its magnetization direction by an external magnetic field. The position of a gravity center Ga of the recording layer 3 in its thickness direction is located at a position of the interior of the recording layer 3 biased by 1/2 of the layer thickness toward the fixed layer 1. COPYRIGHT: (C)2008,JPO&INPIT
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