| 摘要 |
<p>The present invention provides a method of growing crystals in a semiconductor device, the method including: forming a metal layer on a buffer layer; growing crystals of the metal layer in a high temperature; oxidizing a surface of the metal layer; and growing crystals of semiconductor on the oxidized metal layer as a seed layer, by which electric and crystalline characteristics of a semiconductor device can be improved. Since the seed layer is formed on an amorphous or polycrystalline substrate using a metal oxidization layer having a large polycrystalline grain size, the semiconductor grown on the seed layer can have low grain boundary density, high electron mobility, and long lifetime. It is possible to manufacture a semiconductor circuit having an excellent electric characteristic.</p> |
