| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a semiconductor element suitable for a SiP capable of shortening the lead time of the SiP production without lowering the SiP reliability or increasing the number of steps of chip administration. <P>SOLUTION: The semiconductor element comprises power source electrodes 13, 14 formed on one of the principal planes of a semiconductor substrate, earthed electrodes 16, 17, a switching electrode 15 and a plurality of electrodes 18-23, a wiring layer including a plurality of wirings formed in the semiconductor substrate, and a circuit part 12 formed in the semiconductor substrate. In the case the same potential as that of the power source electrodes is applied to the switching electrode, the plurality of the electrodes are connected electrically with the circuit part. In the case the same potential as that of the earthed electrodes is applied to the switching electrode, any two electrodes of the plurality of the electrodes are connected electrically via the wirings. <P>COPYRIGHT: (C)2008,JPO&INPIT |
