| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT in which the switching time from a current on state to a current off state can be shortened by suppressing appearance of a negative resistance component under current on state. SOLUTION: A conductor region 16 penetrating a p-type collector layer 12 and intruding into an n-type base layer 10 is formed on the backside of an IGBT 100. The conductor region 16 is formed in a range not opposing a p-type body region 24. Appearance of a negative resistance component under current on state is thereby suppressed and residual carriers are discharged efficiently to a collector electrode 14 via the conductor region 16 at turning-off. COPYRIGHT: (C)2008,JPO&INPIT |
