| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a capacitor which have high humidity resistance and stability by improving high hygroscopicity of La<SB>2</SB>O<SB>3</SB>. SOLUTION: A high-permittivity insulating film 12 has a composition represented as (La<SB>1-x</SB>M<SB>x</SB>)<SB>2</SB>O<SB>3</SB>(0<x≤0.3, M is one or two or more metals selected from a group of Sc, Y, Hf, Ti, Ta, Al, and Nb), and then the hygroscopicity is improved to have higher stability. COPYRIGHT: (C)2008,JPO&INPIT
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