| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a flash memory device which prevents generation of voids in a device isolation film, when the film is formed by making the horizontal to vertical ratio smaller, through reduction in the thickness of a first conductive film of a floating gate conductive film, even though a first conductive film and a second conductive film are formed. SOLUTION: A portion of a second conductive film 112 are removed by performing an etching process, according to the pattern of a second mask film 114. The region of the removed second conductive film 112 is a device separation region forming a second insulating film 110. Patterning is performed, to partially remove the second conductive film 112 for exposing the second insulating film 110. As a result of this, a first conductive film 104 and the second conductive film 112 constitute a floating gate 115. In the etching process, the second mask film 114 may be removed in its entirety or a part of it may be left. If there is a portion of the second mask film 114 that is left, it is removed. COPYRIGHT: (C)2008,JPO&INPIT
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