METHOD AND DEVICE TO QUANTIFY ACTIVE CARRIER PROFILES IN ULTRA-SHALLOW SEMICONDUCTOR STRUCTURES

摘要

A method and device for determining, in a non-destructive way, at least the active carrier profile from an unknown semiconductor substrate are disclosed. In one aspect, the method comprises generating 2m independent measurement values from the m reflected signals and correlating these 2m measurement values with 2m independent carrier profile values. The method further comprises generating additional 2m measurement values to allow determining the active carrier profile and a second parameter profile by correlating the 4m measurement values with the 4m profile values. The method further comprises generating a total of 2m[n.k] measurement values to allow determining [n.k] independent material parameter depth profiles, each material parameter profile having m points.