发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
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申请公布号 |
US2008224265(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080046001 |
申请日期 |
2008.03.11 |
申请人 |
IWADATE HIDENORI;KOBIKI TAKESHI |
发明人 |
IWADATE HIDENORI;KOBIKI TAKESHI |
分类号 |
H01L27/10;H01L21/02 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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