发明名称 |
METHOD FOR FORMING FULLY SILICIDED GATE ELECTRODE IN A SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor MOS device includes a semiconductor substrate; a gate oxide layer disposed on the semiconductor substrate; a fully silicided gate electrode disposed on the gate oxide layer; a composite thin film interposed between the fully silicided gate electrode and the gate oxide layer; a spacer on sidewall of the fully silicided gate electrode; and a source/drain region implanted into the semiconductor substrate next to the spacer. A method for forming the semiconductor MOS device is disclosed.
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申请公布号 |
US2008224239(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20070686961 |
申请日期 |
2007.03.16 |
申请人 |
LIN CHIEN-TING;CHENG LI-WEI;HSU CHE-HUA;HUANG YAO-TSUNG;MA GUANG-HWA |
发明人 |
LIN CHIEN-TING;CHENG LI-WEI;HSU CHE-HUA;HUANG YAO-TSUNG;MA GUANG-HWA |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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