发明名称 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND PROCESS FOR MANUFACTURING ELECTRONIC DEVICE
摘要 <p>A resist composition that in the technology of liquid immersion exposure, inhibits leaching into a liquid immersion medium and avoids performance deterioration, thereby attaining forming of a fine resist pattern; and, using the resist composition, a method of forming a resist pattern and process for manufacturing an electronic device. There is provided a resist composition for use in liquid immersion exposure, comprising at least a silicon compound having at least an optionally substituted alkali-soluble group and a resin having an alkali-soluble group optionally substituted with an acid elimination group.</p>
申请公布号 WO2008111203(A1) 申请公布日期 2008.09.18
申请号 WO2007JP55145 申请日期 2007.03.14
申请人 FUJITSU LIMITED;KOZAWA, MIWA;NOZAKI, KOJI 发明人 KOZAWA, MIWA;NOZAKI, KOJI
分类号 G03F7/075;G03F7/039;H01L21/027 主分类号 G03F7/075
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