FORMING METHOD OF III-V COMPOUND SEMICONDUCTOR LAYER, PRODUCTION METHOD OF SEMICONDUCTOR LIGHT ELEMENT, AND SEMICONDUCTOR LIGHT ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a formation method of a III-V compound semiconductor layer which uniformizes a composition ratio of nitrogen element in the III-V compound semiconductor layer containing nitrogen element in a thickness direction of the III-V compound semiconductor layer, and also to provide a manufacturing method of the semiconductor light element.

SOLUTION: The forming method of the III-V compound semiconductor layer comprises processes of: growing a first III-V compound semiconductor layer 3 on a substrate 1 while heating the substrate 1 so that the temperature of the substrate 1 becomes a first value Tsub (1); and growing a second III-V compound semiconductor layer 5 on the III-V compound semiconductor layer 3. The process for growing the III-V compound semiconductor layer 5 comprises processes of: heating the substrate 1 so that the temperature of the substrate 1 becomes a value Tsub (2) which is higher than the first value Tsub (1) at formation start time of the III-V compound semiconductor layer 5; and lowering the temperature of the substrate 1 as the III-V compound semiconductor layer 5 grows.

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