| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal electrode forming method for a semiconductor device, capable of reducing the surface roughness of a cut protective film. SOLUTION: A protective film 13 with an opening 13a is formed covering the base electrode 12 of a semiconductor substrate 11, a metal film 14 is formed covering the protective film 13 and the surface 12a of the base electrode 12, and by the cutting work of performing cutting from the surface of the metal film 14 by a pitch P using a cutting tool 21, the metal film 14 is patterned and the metal electrode 15 is formed. In this case, by setting the pitch P so as to establish the relation of 0<P≤2/3(2Rd-d<SP>2</SP>)<SP>1/2</SP>among the curvature radius R of the cutting tool 21, the cut depth d of the protective film 13 and the pitch P, a region where the surface roughness is increased is cut in the cutting after the cutting tool 21 is moved for the pitch P, and thus, the surface roughness of the cut protective film 13 is reduced. COPYRIGHT: (C)2008,JPO&INPIT |
