| 摘要 |
PROBLEM TO BE SOLVED: To suppress the generation of the asymmetry in the circumferential part of a wafer upon film deposition. SOLUTION: A backing plate 6 is arranged at the upper part of a chamber 2 forming a treatment chamber 3, a target plate 8 is fitted to the lower face side thereof, and a magnetron magnet 9 is arranged at the upper side. A susceptor 4 mounting a wafer is arranged at the lower part of the treatment chamber 3. High frequency voltage is applied to the susceptor 4 from a high frequency power source 5. Negative voltage is applied to the backing plate 6 from a d.c. power source 7. A rotary magnet 10 composed in such a manner that many magnets 10a are radially arranged around the outside of the chamber 2, so as to be circular is disposed. The rotary magnet 10 is rotated synchronously with the magnetron magnet 9, and is composed also so as to be freely movable to the upper and lower parts, a cusp magnetic field is formed in the treatment chamber 3, and the orbit of the particles scattered to the side walls of the chamber 2 from the target plate 8 is bent to the wafer side, thus the asymmetry of the film to be deposited in the circumferential part of the wafer can be suppressed. COPYRIGHT: (C)2008,JPO&INPIT
|
