LAMINATE STRUCTURE ON SEMICONDUCTOR SUBSTRATE

摘要

A ferroelectric device of high performance is obtained by using a film of ?-Al₂O₃ single crystal as a buffer layer on a silicon substrate. Film of ?-Al₂O₃ single crystal (6) is superimposed on silicon substrate (4) as a lowermost layer of MFMIS structure thin film (2). Film of LaNiO₃ (8) being an oxide conductor is superimposed as an inferior electrode directly on the film of ?-Al₂O₃ single crystal (6). PZT thin film (10) being a ferroelectric material is superimposed directly on the film of LaNiO₃ (8). Pt layer (12) as a superior electrode is superimposed on the top of the PZT thin film (10).