GROUP III NITRIDE SEMICONDUCTOR THIN FILM, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a high-quality group III nitride semiconductor thin film; and to provide a group III nitride semiconductor light-emitting element obtained by using the same.

SOLUTION: A GaN-layer 120 having a (11-20) plane (so-called a-plane) is epitaxially grown on a sapphire substrate 110 having a (1-102) plane (so-called r-plane) with an off-angle of -0.1 to 0.9° against C3 crystal axis by introducing trimethyl gallium at a flow rate of 200-500 μmol/min while controlling the temperature of the sapphire substrate 110 within a range of 1,100-1,400°C. Thereby, the high-quality group III nitride semiconductor thin film (a Plane GaN layer) can be obtained. Further, The group III nitride semiconductor light-emitting element is manufactured by using the group III nitride semiconductor thin film as a substrate.

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