METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR MICRO COLUMNAR CRYSTAL AND GROUP III NITRIDE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To control the position and shape of group III nitride semiconductor micro columnar crystal by selectively growing micro columnar crystal made of group III nitride semiconductor.

SOLUTION: The method of manufacturing micro columnar crystal includes: a step to form a film having a surface made of metal nitride or metal oxide in a specified area on the surface of a substrate; and a step to grow micro columnar crystal made of group III nitride semiconductor in the vicinity of the border between the film and the substrate by introducing a growing material to the surface of the substrate, at least on a growth promoting area that includes a part wherein the periphery of the film and the surface of the substrate are in contact with each other.

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