发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To efficiently repair a defective line by replacement by a spare line in an array divided into blocks. SOLUTION: A spare memory array (SP#0) having spare memory cells common to a plurality of normal sub-arrays having a plurality of normal memory cells is provided. The defective line of the spare memory array (SP#0) can be replaced by the normal line in the corresponding plurality of normal sub-arrays (MB#00 to MB#n). COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008217984(A) 申请公布日期 2008.09.18
申请号 JP20080118413 申请日期 2008.04.30
申请人 RENESAS TECHNOLOGY CORP 发明人 HIDAKA HIDETO
分类号 G11C29/04;G11C11/401;G11C29/34 主分类号 G11C29/04
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