摘要 |
Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 10<SUP>16 </SUP>Omega-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter<SUP>2</SUP>. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate preferably includes a depletion region which has a reduced concentration of the mobile positive ions.
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