GROUP III NITRIDE-SYSTEM SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride-system semiconductor light-emitting device capable of reducing a drive power voltage.

SOLUTION: A semiconductor surface 19 on which an active layer 17 is provided is equipped with: a first field 19a which equals to (0001) field; and a second field 19b which consists of a facet side inclining to the first field 19a. An InGaN well layer 21 includes: a first portion 21a which is located on the facet side 19b; and a second portion 21b which is located on the first field 19a. Similarly, an InGaN barrier layer 23 includes: a first portion 23a which is located on the facet side 19b; and a second portion 23b which is located on the first field 19a. In the InGaN well layer 21, a thickness d21bof the second portion 21b is thinner than a thickness d21aof the first portion 21a, and the InGaN well layer 21 partially becomes thin by growing up the active layer 17 on the semiconductor surface 19 having the facet side. The facet side on the semiconductor surface 19 is provided by a V pit.

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