| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical substance detection sensor capable of efficiently detecting chemical substance by increasing the ratio of the area of a sensitive section with which the chemical substance contained in unit volume comes into contact. <P>SOLUTION: In the chemical substance detection sensor employing an organic thin film transistor, the organic thin film transistor comprises a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a flow channel disposed inside the gate insulating layer, a hole for connecting the flow channel to an outer peripheral surface of the substrate, a source electrode and drain electrode disposed in the midway of the flow channel, and an organic semiconductor disposed between the source electrode and the drain electrode. By detecting the presence of the chemical substance introduced from the hole to the flow channel as variation of the electrical characteristic of the organic thin film transistor, the chemical substance can be efficiently detected. <P>COPYRIGHT: (C)2008,JPO&INPIT |
