| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of mixedly mounting two kinds of transistors having mutually and substantially different operating voltages on a substrate having a band gap larger than that of a silicon substrate. SOLUTION: The semiconductor device has: a first transistor formed on an SiC substrate 1; a first interlayer dielectric 11 formed at an upper part of the first transistor and the SiC substrate 1; and a crystallization silicon film 20 formed on the first interlayer dielectric 11; and a second transistor formed on the crystallization silicon film 20. An operating voltage of the first transistor is, for example, 100-1,000 V, and that of the second one is, for example, 3-5 V. COPYRIGHT: (C)2008,JPO&INPIT
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