| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which, at the step of forming metal silicide by use of an alloy containing a noble metal, can remove the as-unreacted remaining alloy without introducing a new manufacturing equipment or increasing operational costs, or without causing a residue of the noble metal. SOLUTION: This manufacturing method of the semiconductor device has the steps of: forming a metal alloy film made of the alloy of a metal such as Ni or the like and the noble metal on a semiconductor substrate containing a region where silicon is partially exposed; selectively reacting silicon in the exposed region with the metal alloy film by a heat treatment to form a metal silicide film containing the metal such as Ni or the like and the noble metal on the exposed region; and removing the as-unreacted remaining metal alloy film by use of a solution containing a melted transition metal having a higher ionization tendency than the metal such as Ni or the like, and peroxide. COPYRIGHT: (C)2008,JPO&INPIT
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