| 摘要 |
PROBLEM TO BE SOLVED: To increase a pitch between patterns of a mask by the integral number of times and eliminate deformation and cracks due to a reduction in strength between through-holes of the mask and improve the throughput of exposure to a wafer concerning an electron beam exposure device and an electron beam exposure method. SOLUTION: An electron beam exposure device comprises a mask 3 on which a pattern which is repeatedly arranged in a pattern group and the pitch of which is increased by the integral number of times is formed, a first transferring mechanism for sequentially transferring the mask by shifting the mask by a specified fraction of the integral number of the pitch of the pattern on the mask at a time in a state in which the mask is arranged close to a wafer, an exposure means for exposing to the wafer the pattern on the mask with an electron beam, and a second transferring mechanism for transferring, after the completion of the exposure to the wafer by the first transferring mechanism and the exposure means, the wafer to a next shot position. Processing is repeated by the first transferring mechanism and the exposure means in a state in which the wafer is transferred by the second transferring mechanism to the next shot position. COPYRIGHT: (C)2008,JPO&INPIT
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