| 摘要 |
PROBLEM TO BE SOLVED: To constitute a film, containing at least nitrogen and whose principal constituent is silicon, with superior composition control properties, without giving damages to a gate insulating film, regarding a field-effect semiconductor device and its manufacturing method. SOLUTION: A conductive film containing silicon and nitrogen, which is 5-30 atomic number% with respect to silicon, is employed as at least one part of a gate electrode 3. COPYRIGHT: (C)2008,JPO&INPIT
|
