| 摘要 |
The present invention relates to a method of forming a pattern of a semiconductor device. According to the method, patterns are formed on a substrate. First photoresist patterns are formed in regions where the patterns are opened. The first photoresist patterns are diffused to upper corners of the patterns, thus forming second photoresist patterns. The patterns are etched using the second photoresist patterns as an etch-stop layer. Accordingly, smaller photomask patterns can be formed.
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