发明名称 |
Methods of forming a semiconductor device |
摘要 |
Methods of forming a semiconductor device include forming a mask layer on a semiconductor substrate. The mask layer has vertically and horizontally extending portions. The vertically extending portions have a thickness selected to provide a desired line width to an underlying structure to be formed using the mask layer and a height greater than a height of the horizontally extending portions. The underlying structure is formed using the mask layer.
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申请公布号 |
US2008227258(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080074992 |
申请日期 |
2008.03.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SANG-YONG;KWON SUNG-HYUN;SIM JAE-HWANG;KIM KEON-SOO;PARK JAE-KWAN |
分类号 |
H01L21/336;H01L21/31 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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