发明名称 SPINTRONIC TRANSISTOR
摘要 <p>A semiconductor device Including: a substrate comprising silicon: a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a spin detector formed on the substrate at a second side of the channel region and configured to receive said spin polarized current from the channel region; and a gate formed on the substrate in an area of said channel region,</p>
申请公布号 WO2008111991(A2) 申请公布日期 2008.09.18
申请号 WO2007US73099 申请日期 2007.07.10
申请人 TOKYO ELECTRON LIMITED;KAUSHAL, SANJEEV;SUGISHIMA, KENJI;GANGULY, SWAROOP 发明人 KAUSHAL, SANJEEV;SUGISHIMA, KENJI;GANGULY, SWAROOP
分类号 H01L31/00 主分类号 H01L31/00
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