<p>A semiconductor device Including: a substrate comprising silicon: a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a spin detector formed on the substrate at a second side of the channel region and configured to receive said spin polarized current from the channel region; and a gate formed on the substrate in an area of said channel region,</p>
申请公布号
WO2008111991(A2)
申请公布日期
2008.09.18
申请号
WO2007US73099
申请日期
2007.07.10
申请人
TOKYO ELECTRON LIMITED;KAUSHAL, SANJEEV;SUGISHIMA, KENJI;GANGULY, SWAROOP